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用透射电子显微镜(TEM)、扫描透射电子显微镜(STEM)和电子能量损失谱(EELS)对高剂量氮离子注入再经热退火所形成的硅-绝缘层(SOI)结构的纵断面进行了微区分析并测定了氮-硅元素浓度比沿深度的分布. EELS的分析证明了在绝缘层的多孔区中可能有一些以气体形式出现的氮分子. 利用EELS的低能等离子峰形成的能量选择像能够对硅和氮化硅进行相分离,并有助于估计可能引起短路的因素.
The longitudinal section of silicon-on-insulator (SOI) structure formed by high-dose nitrogen ion implantation and thermal annealing was characterized by transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) The distribution of nitrogen to silicon concentration ratios along the depth was analyzed and analyzed.EELS analysis demonstrated that there may be some nitrogen molecules in gaseous form in the porous region of the insulating layer.Energy selection images formed using low energy plasma peaks of EELS Silicon and silicon nitride can be phase-separated, and help to estimate the factors that can cause short circuits.