【摘 要】
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Wide band gap semiconductor films, including silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO) and their compounds and isomers, posess a band gap l
【机 构】
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华南师范大学光电子材料与技术研究所,广州510631中山大学光电材料与技术国家重点实验室,物理科学与工程技术学院,广州510275广西大学物理科学与工程技术学院,广西相对论天体物理重点实验室,光电子材
论文部分内容阅读
Wide band gap semiconductor films, including silicon carbide (SiC), gallium nitride (GaN), zinc oxide (ZnO) and their compounds and isomers, posess a band gap larger than 3.2 eV, and the characteristic phonon peak lies between 100 and 1500 cm-1.There are many methods to determine the band width and the characteristic phonon peaks, such as photoluminescence, Raman scattering and optical transmission spectra etc.Here we propose a combination of spectroscopic ellipsometry and Fourier transform infrared reflection spectrum analysis by transfer matrix method, which can determine the dispersion spectra and film thickness simultaneously, ranging from ultra-violet (around 250 nm) to far infrared (about 22000 nm).We construct an optical function model based on harmonic oscillator, and demonstrate that the model is suitable for simulating the resonance absorption of incident light with various wavelengths.
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