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Cubic (3C)-SiC films were grown on Si (100) substrate by chemical vapor deposition (CVD).Silicon carbide (SiC) is a wide gap semiconductor material.At the high temperature, it still maintains the low intrinsic carrier concentration, high break down electric field, high saturated electron drift velocity, high thermal conductivity and other features[1].In this paper, Raman scattering and spectroscopic ellipsometry (SE) were used to characterize several 3C-SiC films.