Polarized Raman study of HOPG and its application on alignment characterization of graphene-stacked

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Raman spectroscopy has proven to be a standard contactless, non-destructive and highly specific method for semiconductor material characterization like a chemical fingerprint.It can also provide detailed information about their crystal structure, phonon dispersion, electronic states, stress, and so on.Orientation-dependent polarization measurement usually acts as an important tool to provide structural information on supedattice and quantum well structure which have flack structures and specific crystal orientation.It has also proven to be a unique characterization tool for alignment of single-wall nanotube,GaAs-nanowires with zinc-blende and wurtzite structure, single GaN nanowires and so on, whose anisotropic structure can lead to various orientation-dependent properties.
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