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Semiconductor electro-optic modulators(EOMs)with quantum dot(QD)active region offer a path to highly efficient modulators with small sizes and low voltages [1-5].This research exploits the anisotropic properties of traveling-wave EOM devices with spatially-organized InGaAs QD-Chains as active region.The EOM structure,as illustrated in Fig.1(a),consists of 16-layers of InGaAs QDs clad by GaAs separate confinement heterostructures(SCH)sandwiched between AlGaAs cladding layers [4].Fig.1(b)shows that the InGaAs QDs are aligned and form QD-Chains along [01-1] direction after stacking of 16 layers.