Simultaneous Multi-color Lasing Emissions in a Lateral Composition Graded Nanoribbon

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户：zhangyanruru

【摘要】

：

　　Band gap integration in a single semiconductor nanostructure is an important task for their applications in photonics and nanoelectronics [1,2].Here we repo

【作者】

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PengfeiGuo;DanLi;HuaweiLiu;AnlianPan;

【机构】

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Key Laboratory for Micro-Nano Physics and Technology of Hunan Province,School of Physics and Electro

【出处】

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The 6th International Conference on Nanoscience and Technolo

【发表日期】

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2015年期

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　　Band gap integration in a single semiconductor nanostructure is an important task for their applications in photonics and nanoelectronics [1,2].Here we report the lateral growth of composition graded CdSxSe1-x alloys along single nanoribbons by an improved chemical vapor deposition method [3].The composition can be gradually tuned along the lateral direction from pure CdS to CdSSe alloy(x=0.38)of the nanoribbon,leading to the corresponding bandgap modulation from 2.42 eV to 1.98 eV.

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Simultaneous Multi-color Lasing Emissions in a Lateral Composition Graded Nanoribbon

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