【摘 要】
：
本工作采用真空蒸镀，磁控溅射等技术深入研究了CdS/Si异质结太阳电池的制备工艺过程。实验过程主要是通过真空蒸镀技术在P型(100)硅片上沉积n型CdS薄膜，通过控制CdS的蒸发速率及衬底温度以达到优化工艺的目的 ，同时对CdS的光学及电学性能进行表征。最终通过Ⅰ-Ⅴ测试分析了不同的工艺参数及材料的不同电学和光学性能对CdS/Si异质结太阳电池效率的影响。
【出 处】
：
SNEC 第十届(2016)国际太阳能产业及光伏工程(上海)论坛
论文部分内容阅读
本工作采用真空蒸镀，磁控溅射等技术深入研究了CdS/Si异质结太阳电池的制备工艺过程。实验过程主要是通过真空蒸镀技术在P型(100)硅片上沉积n型CdS薄膜，通过控制CdS的蒸发速率及衬底温度以达到优化工艺的目的 ，同时对CdS的光学及电学性能进行表征。最终通过Ⅰ-Ⅴ测试分析了不同的工艺参数及材料的不同电学和光学性能对CdS/Si异质结太阳电池效率的影响。
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