【摘 要】
：
It has been demonstrated in the PV industry that a drift field in the wafer enhances the effective minority carrier collection resulting in a boost of efficiency.As early as 1963,it was proposed and m
【机 构】
：
1366 Technologies
【出 处】
：
SNEC 第十届(2016)国际太阳能产业及光伏工程(上海)论坛
论文部分内容阅读
It has been demonstrated in the PV industry that a drift field in the wafer enhances the effective minority carrier collection resulting in a boost of efficiency.As early as 1963,it was proposed and modeled that a doping gradient can be established to generate an electric field to guide the minority charge carriers towards the junction.However,it is impossible to manipulate dopant concentration with standard sawn wafers (multi or mono) because there is no cost effective way of introducing the doping profile to achieve the drift field.Kerfless silicon wafers,made from molten silicon using Direct WaferTM technology,can be produced with a steep gradient in dopant concentration between the front and the back of the wafer.
其他文献
Potential induced degradation (PID) plays a very important role in PV industry,especially in solar power plant.When PID occurs in module will strongly influence power generation performance.For crysta
目前地面光伏电站支架结构计算中方阵风荷载按照GB50797-2012《光伏电站设计规范》规定进行，即体型系数取1.3(单坡屋盖)，对于集中式光伏电站区域面积大、场地开阔、方阵结构简单、布置整齐、属大型群体类结构.根据国外光伏电站一些资料介绍及GB50009《建筑结构荷载规范》中局部体型系数有关规定，地面光伏电站不同区域如角部，北边(后排)，南边(前排)，东西边部，中间区域其不同位置体型系数不同的.
The efficiency of single-junction crystalline silicon (c-Si) solar cells has approached its practical limit.Application of the tandem device architecture,based on the commercially successful c-Si sola
P-type PERC solar cells got more and more attention in recent years due to 1% sbsolutely efficiency gain compared to conventional AI-BSF solar cells by adding only 3 steps.However,PERC made with conve
We present a novel Solar PV System Design (UK Patent Application Number 1518185.2) ?that shows an increase from 13.5% to 60% efficiency per m2 of standard silicon photovoltaic modules.An advantage of
n-type PERT (passivated emitter,rear totally diffused) bifacial solar cells with boron and phosphorus diffusion as p+ emitter and n+ BSF (back surface field) have attracted significant research intere
We introduce a new approach to determine the interconnect resistance from electroluminescence (EL) images.The method was applied to a mono-crystalline silicon cell module as well as a multi-crystallin
Aluminum oxide(Al2O3) deposited by atomic layer deposition has good passivation quality.Al2O3 thin film makes field effective passivation due to negative fixed charge.Al2O3 thin film can be applied to
Passivated emitter and rear cell (PERC) technology tends to become a standard for the p-type crystalline solar cells in recent years due to its high-performance structure.In this work,we present our s
Light-induced degradation (LID) is a well-known problem faced by p-type Cz monocrystalline silicon (mono-Si) solar cells.The physical mechanism has been attributed to the formation of recombination ac