【摘 要】
：
Aluminum oxide(Al2O3) deposited by atomic layer deposition has good passivation quality.Al2O3 thin film makes field effective passivation due to negative fixed charge.Al2O3 thin film can be applied to
【机 构】
：
Korea Institute of Energy Research,Korea
【出 处】
：
SNEC 第十届(2016)国际太阳能产业及光伏工程(上海)论坛
论文部分内容阅读
Aluminum oxide(Al2O3) deposited by atomic layer deposition has good passivation quality.Al2O3 thin film makes field effective passivation due to negative fixed charge.Al2O3 thin film can be applied to the surface of p type Si.To fabricate the solar cell,high temperature firing process is essential.Because Al2O3 thin film contains lots of hydrogen,generating hydrogen gas during the firing process makes blistering.This blistering decreases the passivation quality of Al2O3 thin film.To avoid the blistering,hydrogen contents in Al2O3 thin film should be controlled.In this study,Al2O3 thin film was deposited by plasma-assisted atomic layer deposition (PAALD).OH concentration of Al2O3 thin film was controlled by RF power from 200 W to 800 W.After annealing process,effective carrier lifetime(Teff) and implied open circuit voltage(iVoc) were increased.After firing process,Teff and iVoc were increased when blistering was not occurred.However,Teff and iVoc were decreased when blistering was occurred.To obtain the fixed charge and interface trap density,capacitance-voltage and conductance-voltage were used.Decrease of passivation quality after firing process was not due to fixed charge but due to interface trap density.OH concentration of Al2O3 thin film was characterized by X-ray photoelectron spectroscopy.OH concentration of Al2O3 thin film showing blistering was higher than others.
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