【摘 要】
：
We introduce a new approach to determine the interconnect resistance from electroluminescence (EL) images.The method was applied to a mono-crystalline silicon cell module as well as a multi-crystallin
【机 构】
：
Solar Energy Research Institute of Singapore,NUS,Singapore;National University of Singapore,Singapor
【出 处】
：
SNEC 第十届(2016)国际太阳能产业及光伏工程(上海)论坛
论文部分内容阅读
We introduce a new approach to determine the interconnect resistance from electroluminescence (EL) images.The method was applied to a mono-crystalline silicon cell module as well as a multi-crystalline cell module,and the resultant derived interconnect series resistance to be 0.200 and 0.184 Ω,respectively.The contributions of the solar cell distributed series resistance on the result is evaluated using finite-element simulations in "GRIDDLER 2" simulation software.
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