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外延晶格失配等引入的非辐射复合缺陷是影响GaN基LED性能的重要因素。对不同LED样品老化1 600h前后的I-V特性、理想因子以及量子效率、发光特性进行了测量研究,并结合非辐射复合缺陷的定量测量,分析验证了非辐射复合缺陷对LED老化性能的影响。结果表明,非辐射复合缺陷是造成GaN基LED老化过程中隧穿电流增大、I-V特性偏离理想模型、理想因子增大以及光输出非线性化等现象的根本因素。在此基础上建立了非辐射复合缺陷浓度与LED老化性能之间的关系模型,提出了一种基于非辐射复合缺陷浓度及其恶化系数的GaN基LED老化性能评测方法。
The introduction of non-radiative recombination defects such as epitaxial lattice mismatch is an important factor that affects the performance of GaN-based LEDs. The I-V characteristics, ideal factors, quantum efficiency and luminescence properties of different LED samples aged before and after 1 600h were measured and studied. Combined with the quantitative measurement of non-radiation composite defects, the influence of non-radiation composite defects on LED aging performance was verified. The results show that the non-radiative recombination defects are the fundamental factors that cause the tunneling current to increase, the I-V characteristics deviate from the ideal model, the ideal factor increase and the light output nonlinearity during the aging of GaN-based LED. On this basis, the relationship model between the concentration of non-radiative recombination defects and the aging performance of LED was established, and a method of evaluating the aging performance of GaN-based LED based on the concentration of non-radiative recombination defect and its deterioration coefficient was proposed.