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测定了ＴＡＰ晶体中铊离子的价态，发现ＴＡＰ晶体中除了一价的铊离子Ｔｌ＋外，还有少量三价铊离子Ｔｌ３＋的存在．实验还测定ＴＡＰ晶体中存在的金属离子杂质，总量为０２０７ｍｇ／ｇ．联系ＴＡＰ结构的特点讨论了ＴＡＰ晶体存在Ｔｌ３＋和金属离子杂质是产生ＴＡＰ晶体结构缺陷的重要原因，并分析了ＴＡＰ晶体位错线基本走向平行于ｃ轴的原因
The valences of thallium ions in TAP crystals were determined. In addition to the monovalent thallium ions Tl +, a small amount of trivalent thallium ions Tl3 + was found in TAP crystals. The experiment also determined the existence of metal ion impurities in TAP crystals, the total amount of 0 207mg / g. The TAP structure is discussed. The existence of Tl3 + and metal ion impurities in TAP crystals are the main reasons for the structural defects in TAP crystals. The reason why the TAP crystal dislocation lines are basically parallel to the c axis is discussed