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为获得好的抗击穿特性和有效激发,交流电致发光(ac EL)器件需要高电容率,高绝缘强度的薄膜绝缘层。制做绝缘层时,温度、反应气体等沉积因素应不影响用于制造发光器件的薄膜特性。此外,绝缘薄膜应很好地粘着EL薄膜,并钝化它。作者通过研究射频溅射的非晶钛酸钡薄膜在10Hz至100KHz频率范围内的交流介电特性以及其静态介电击穿强度,确定这种薄膜是否适用。
For good anti-breakdown characteristics and effective excitation, ac electroluminescent (ac EL) devices require thin dielectric layers of high permittivity and high dielectric strength. When making insulating layers, the deposition factors such as temperature, reaction gas and the like should not affect the film characteristics used to fabricate the light emitting device. In addition, the insulating film should adhere well to the EL film and passivate it. By investigating the alternating current dielectric properties of amorphous barium titanate films sputtered by radio frequency sputtering in the frequency range of 10Hz to 100KHz and their static dielectric breakdown strength, the authors determine whether this film is suitable.