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我们用熔融KOH作位错腐蚀剂,并用位错跟踪腐蚀的方法显示DH外延片的位错,结果表明,可以依照 DH外延片顶层(P~+-GaAs层)的位错腐蚀坑形状,区分出从 n-GaAs延伸上来的位错和由异质结外延引进的位错.
We use molten KOH as a dislocating etchant and show the dislocation of the DH epitaxial wafer by using the dislocation tracking etching method. The results show that the dislocation pit of the DH epitaxial wafer (P ~ + -GaAs layer) Dislocations extending from n-GaAs and dislocations introduced by heterojunction epitaxy.