论文部分内容阅读
针对混合成分二维半导体的研究需求,利用高温箱式炉进行各组分多晶的合成,并在高温三温区管式炉中,利用四氯化碲(TeCl_4)作为输运剂,采用气相输运法(chemical vapor transport,CVT)生长出MoS_xSe_(2-x)混合成分二维半导体块材.将所生长出的块材利用机械剥离法进行剥离,并对剥离出的单层二维材料进行了光致发光(photoluminescence,PL)谱线检测,测得其混合成分对材料特征谱线的影响.结果表明:混合成分材料的光致发光谱线由其组成各组分的谱线叠加而成,并且叠加时近似按混合成分比例代数叠加.
Aiming at the research demand of two-dimensional semiconductors with mixed components, polycrystalline polycrystalline components were synthesized by high-temperature box furnace. In the high-temperature three-temperature tube furnace, TeCl_4 was used as transport agent, (2-x) mixed two-dimensional semiconductor block was grown by chemical vapor transport (CVT). The grown block was peeled off by mechanical stripping method, and the single layer two-dimensional material The photoluminescence (PL) spectra were measured and the effects of the mixed components on the characteristic lines of the materials were investigated. The results showed that the photoluminescence spectra of the mixed materials were superimposed by the spectra of the components Into, and superimposed by the proportion of mixed ingredients algebraic superimposed.