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基于4英寸(1英寸=2.54 cm)GaAs PHEMT工艺,设计和制作了一款X波段驱动功率放大器单片集成电路。详细介绍了微波单片集成电路(MMIC)的设计方法,并对芯片进行了测试,测试结果为:在8～12 GHz频带内,功率放大器的增益大于20 dB、1 dB压缩点输出功率大于21 dBm、输入输出驻波比小于1.6∶1,单电源8 V供电,电流小于80 mA。采用具有谐波抑制作用的输出匹配电路,获得了较好的谐波抑制指标,在1 dB压缩点输出功率大于21 dBm时,全频带的二次谐波抑制比均小于-40 dBc。单片电路的最终面积为2.0 mm×1.4 mm×0.1 mm,可广泛应用于各种微波系统。
Based on the 4-inch (1 inch = 2.54 cm) GaAs PHEMT process, an X-band drive power amplifier monolithic integrated circuit was designed and fabricated. The design method of microwave monolithic integrated circuit (MMIC) is introduced in detail, and the chip is tested. The test results show that the gain of the power amplifier is more than 20 dB in 8-12 GHz band and the output power of 1 dB compression point is more than 21 dBm, I / O VSWR less than 1.6: 1, single supply 8 V, current less than 80 mA. The output matching circuit with harmonic suppression is used to obtain the better harmonic rejection index. When the output power is greater than 21 dBm at 1 dB compression point, the second harmonic rejection ratio in the whole frequency band is less than -40 dBc. The final area of the monolithic circuit is 2.0 mm × 1.4 mm × 0.1 mm, which can be widely used in various microwave systems.