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研究了用化学气相淀积方法制备的SnO_2薄膜的组成。晶体结构和气敏性能。发现薄膜为多晶结构,在薄膜生长过程中,(200)、(110)晶面择优生长;薄膜对H_2的气敏灵敏度随温度的升高而增加,并存在一合适的工作温度范围:100～250℃。
The composition of SnO_2 thin films prepared by chemical vapor deposition was studied. Crystal structure and gas sensitivity. The results show that the (200) and (110) planes preferentially grow during the growth of the thin films. The sensitivity of the thin films to H 2 increases with increasing temperature, and there is a suitable operating temperature range of 100 ~ 250 ℃.