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本文叙述并论证了使用高能脉冲激元激光器进行无斑点,细线条、高速光刻的一种新技术。为了对各种抗蚀剂能获得一组最理想的谱线,提出了采用受激喇曼频移技术。这就第一次使得对于一种已给定的抗蚀剂上,以达到最佳状态的曝光波长来适应该抗蚀剂。而不是让抗蚀剂来适应曝光波长。采用该原理,已在1微米厚的重氮抗蚀剂上(例如AZ-2400和重氮基萘醌-酚醛清漆树脂胶)获得了最佳质量的图像。该结果是利用308毫微米波长的XeCl激光器和一台248毫微米波长的KrF激光器采取接触式曝光得到的。每毫米1000线对的分辨率已在实验室得到证实。此图形同目前采用普通光源接触式光刻做出最高水平的图形作了比较,其主要差别在于:激元激光技术大约快两个数量级。通过对在几种抗蚀剂上失败的区易性试验表明,尽管用于激光器曝光的能量增大了约10~3倍,但其灵敏度却下降了2倍。文章讨论了上述几方面结果中,不同于普通白炽灯曝光对发生的情况与采用激光器曝光时光化反应性能上的差别。
This paper describes and demonstrates the use of high-energy pulsed excimer lasers for spot-free, fine line, high-speed lithography. In order to obtain the most ideal spectrum for a variety of resists, a stimulated Raman shift technique is proposed. For the first time this makes it suitable for a given resist at an exposure wavelength that is optimum. Instead of having the resist adapt to the exposure wavelength. Using this principle, the best quality images have been obtained on 1 micron thick diazo resists such as AZ-2400 and diazonaphthoquinone-novolak. The result was obtained by contact exposure using a 308 nm XeCl laser and a 248 nm KrF laser. The resolution of 1000 lines per millimeter has been confirmed in the laboratory. This graphic is compared with the current graphics made using the most common contact light lithography, with the main difference being that excimer laser technology is approximately two orders of magnitude faster. The ease of doing tests on several resists showed that although the energy used for laser exposure increased about 10 to 3 times, its sensitivity decreased by a factor of two. The article discusses the results of the above aspects, different from the incandescent light exposure on the situation and the use of laser exposure photochemical reaction performance differences.