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如果用具有几百电子伏能量的离子轰击物质,那么每个离子打在物质上后大约就会有一个原子从物质中飞出。可以利用这样的离子轰击一个个地去除原子,这种方法称为离子磨削或离子腐蚀。最近已用于磁泡、DFB激光器、弹性表面波元件中微米以至亚微米的微细加工。光刻技术中的化学腐蚀被离子腐蚀代替的例子很多。如图1所示,将部分表面掩蔽起来,而后使用离子轰击加工。掩模材料可以原封不动地使用光致拉蚀剂,图形可以用光刻技术或电子束曝光来制作。兼顾到腐蚀速度和加工影响,离子的加速电压控制在1～5千伏之间,离子电流密度为1～10毫安/厘米~2。双等离子管和空心阳极等离子枪可使用具有φ1～50毫米
If the material is bombarded with ions with energies of several hundred electron volts, about one atom will fly out of the material after each ion hits the material. You can use such an ion bombardment to remove atoms one by one, this method is called ion milling or ion etching. Recently, it has been used in microfabrication of micron to sub-micron in bubble, DFB laser and surface acoustic wave device. There are many examples of chemical etching replaced by ion etching in lithography. As shown in Figure 1, part of the surface is masked and then ion bombarded. The mask material can be used intact as a photo-resist, and the pattern can be formed by photolithography or electron beam exposure. Taking into account the corrosion rate and processing effects, the accelerating voltage of ions is controlled between 1 and 5 kV, and the ionic current density is 1 to 10 mA / cm2. Dual plasma tubes and hollow anode plasma guns can be used with φ1 ~ 50 mm