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近年来用CMT制作光电二极管的兴趣有所增长。CMT光电二极管可供电子扫描混合焦平面列阵使用。目前大多数器件是使用一块带n型表面的少型薄片制造的,该n型表面层是通过离子注入或扩散当中任何一种方法产生的。在两种类型的结中,R_0A乘积依赖于p型衬底的净掺杂浓度。例如在离子注入结中,如果衬底的掺杂浓度太高,即使在零偏压下,结的隧道电流也可限制其性能。要获得具有高零偏压的结面电阻—R_0A之积[1]—的离子注入探测器,就必须将载流子浓度确定为1×10~(16)cm~(-3)或者更小一些。
Interest in making photodiodes using CMT has increased in recent years. CMT photodiodes are available for electronically scanning hybrid focal plane arrays. Most devices are currently fabricated using a thin sheet of n-type surface produced by either ion implantation or diffusion. In both types of junction, the R_OA product depends on the net doping concentration of the p-type substrate. For example, in ion implantation junctions, the junction tunneling current can limit its performance even at zero bias if the substrate’s doping concentration is too high. To get an ion-implanted detector with a high zero-bias junction resistance, R_OA, [1] -, the carrier concentration must be 1 × 10 ~ (16) cm ~ (-3) or less some.