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日本松下电气公司基于两个互补场效应管的功能集成,已研制出一种电压控制的负阻器件。这种器件的峰谷电流比为10~5,较之隧道二极管大10~4倍。若干个器件可在单片上制得,也可以在同一片子上和双极晶体管一起进行集成。器件是用P型材料且通过二个n型外延隔离区制得,而N型沟道耗尽型结型场效应管用二次扩散来制得,即P_2扩散以作栅,n~+扩散以作源和漏。反之也行,就P型沟道场效应管而言,P_2扩散以作源和漏,
Japan Matsushita Electric Company based on the functional integration of two complementary FETs, has developed a voltage-controlled negative resistance device. The peak-to-valley current ratio of this device is 10 to 5, 10 to 4 times larger than the tunnel diode. Several devices can be fabricated on a single chip, and can be integrated with bipolar transistors on the same chip. The device is made of P-type material and is made of two n-type epitaxial isolation regions, and the N-type channel depletion-type junction field effect transistor is fabricated by second diffusion, that is, P 2 diffusion for gate and n + diffusion As the source and drain. The opposite is also true, P-channel FET, P_2 diffusion for the source and drain,