论文部分内容阅读
以前,电荷转移器件只能制作移位寄存器,现在美国通用电气公司使用表面电荷晶体管制成了动态随机存取存储器(RAM)。这存储器为4×8位阵列,可发展为4096位存储器。每位面积为2.5密耳~2,存取时间150毫微秒,循环时间250毫微秒。制造存储器采用耐熔金属MOS工艺,其目的是使其单元结构能与当前MOS RAM的单晶体管结构同样简单,单晶体管单元存在的问题是位线的电容很高,往往导致逻辑信号电平的损耗。为解决这问题,GE公司先将电荷从位线存储区取出,然后从位线转移到
Previously, charge-transfer devices could only make shift registers, and now General Electric uses surface-charged transistors to make Dynamic Random Access Memory (RAM). This memory is a 4 × 8 bit array, can be developed as 4096 bits of memory. Each area of 2.5 mils ~ 2, access time of 150 nanoseconds, cycle time of 250 nanoseconds. The manufacturing memory is made of a refractory metal MOS process, the purpose of which is to make its cell structure as simple as the current MOS RAM single transistor structure. The problem with single transistor cells is that the bit line capacitance is high, often resulting in loss of logic signal levels . In order to solve this problem, GE first removes the charge from the bit line memory and then transfers from the bit line to