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本文叙述用于硅集成电路中的铝-钛金属化工艺,这种金属化能产生高电导的电接触,而对硅的溶解可以忽略。然而,如果反应的产物TiAl_3能去掉整个钛层的话,那么希望要的接触是得不到的。TiAl_3是在金属化后用来稳定接触的电特性而进行热处理时形成的,发现在这样的反应中按比例于t~(1/2)的速率消耗钛层,速率常数由d=d_oexp(-E_a/kT)确定,式中d_o≈0.15厘米~2/秒和E_a≈1.85电子伏。这个速率常数能用来确定制造合乎要求的电接触所需要的钛层的厚度。
Described herein is an aluminum-titanium metallization process for silicon integrated circuits that produces highly-conductive electrical contacts with negligible dissolution of silicon. However, if the reaction product TiAl_3 can remove the entire titanium layer, the desired contact is not obtainable. TiAl_3 was formed during the heat treatment after the metallization to stabilize the electrical properties of the contacts and it was found that in such reactions the titanium layer was consumed at a rate of t ~ (1/2), with a rate constant given by d = d_oexp (- E_a / kT), where d_o≈0.15 cm 2 / sec and E_a≈1.85 electron volts. This rate constant can be used to determine the thickness of the titanium layer required to make the desired electrical contact.