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本文介绍了目前半导体工艺中采用的介质薄膜中局部缺陷的各种探测和分析方法,分析了各种方法的应用场合及其限制。典型的介质层有热生长二氧化硅与汽相淀积二氧化硅、硅酸盐玻璃、氯化硅、氧化铝以及厚度为几百埃至数微米的复合硅酸盐。本文叙述比较详细的分析方法有反差显微镜、扫描电子显微镜、自复合质击穿、选择化学腐蚀、电解染色、液晶方法、电子探针微量分析和离子探针微量分析。另外还简单地介绍了其他几种方法。讨论的重点放在这些方法的最新改进方面。最后用典型实例说明了这些方法的应用,并讨论了其发展趋向。
This paper introduces the various detection and analysis methods of the local defects in the dielectric film used in the current semiconductor technology, and analyzes the application occasions and the limitations of the various methods. Typical dielectric layers are thermally grown and vapor deposited silicas, silicate glasses, silicon chlorides, aluminas and composite silicates with thicknesses of a few hundred angstroms to several microns. This article describes a more detailed analysis methods are contrast microscopy, scanning electron microscopy, self-compound breakdown, selective chemical etching, electrolytic staining, liquid crystal method, electron probe microanalysis and ion probe microanalysis. In addition also briefly introduced several other methods. The discussion focused on the latest improvements in these methods. Finally, the typical examples illustrate the application of these methods, and discuss its development trend.