论文部分内容阅读
Investigation in band structure,gap engineering and transport in semimetallic two-dimensional InAs/G
【机 构】
:
Laboratory of Condensed Matter Physics and Nano Re,University Ibn Zohr,Agadir Morocco
【出 处】
:
The 13th International Conference on Mid-Infrared Optoelectr
【发表日期】
:
2016年10期
其他文献
In this work,type conversion induced by ion beam milling(IBM)in LW HgCdTe is characterized.A serial of junctions were fabricated by IBM.There is a series of N-type pairs that distances are varied from
会议
Electroluminescence and photovoltaic effect in n-GaSb/InAs/p-GaSb heterostructure grown by MOVPE wit
InAs/GaSb quantum well(QW)structures attract a great attention due to their unique type Ⅱ broken-gap alignment [1].Such heterojunctions are important for design of QC lasers and MIR-superlattice photo