论文部分内容阅读
High-speed quantum cascade laser at room temperature
【机 构】
：
Key Laboratory of Semiconductor Materials Science,Institute of semiconductors,Chinese Academy of Sci
【出 处】
：
The 13th International Conference on Mid-Infrared Optoelectr
【发表日期】
：
2016年10期
其他文献
Study of the characteristics of LPE p+-on-n heterojunction LWIR photovoltaic detectors in Variable-a
The LPE in-situ growth p+-on-n heterojunction LWIR photovoltaic detectors was made in our group.Resistance-voltage(R-V)curves were measured in the 80K.And variable area structure was made in order to
会议
In this work,type conversion induced by ion beam milling(IBM)in LW HgCdTe is characterized.A serial of junctions were fabricated by IBM.There is a series of N-type pairs that distances are varied from
会议
Electroluminescence and photovoltaic effect in n-GaSb/InAs/p-GaSb heterostructure grown by MOVPE wit
InAs/GaSb quantum well(QW)structures attract a great attention due to their unique type Ⅱ broken-gap alignment [1].Such heterojunctions are important for design of QC lasers and MIR-superlattice photo