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5. Molecular Beam Epitaxial(MBE)Growth of 3μm Laser using InGaAsSb/AlInAsSb Quantum Well Structure

Molecular Beam Epitaxial(MBE)Growth of 3μm Laser using InGaAsSb/AlInAsSb Quantum Well Structure

来源 :The 13th International Conference on Mid-Infrared Optoelectr | 被引量 : 0次 | 上传用户：wang81920

【作 者】

：

Chunte Lu Ron Kaspi Tim Newell Chi Yang Sun Luong Don Gianardi 

【机 构】

：

Air Force Research Laboratory Directed Energy Directorate Albuquerque,New Mexico,87117 USA

【出 处】

：

The 13th International Conference on Mid-Infrared Optoelectr

【发表日期】

：

2016年10期

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