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The LPE in-situ growth p+-on-n heterojunction LWIR photovoltaic detectors was made in our group.Resistance-voltage(R-V)curves were measured in the 80K.And variable area structure was made in order to access the quality of the material and surface passivation in HgCdTe device technology.Through data analysis and curves fitting of the relationship between zero-bias resistance-area product(R0A)of a diode and its perimeter-to-area ratio(p/A),the contributions of bulk and surface effects could be distinguished,and the minority carrier diffusion length could be calculated.