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In this work,type conversion induced by ion beam milling(IBM)in LW HgCdTe is characterized.A serial of junctions were fabricated by IBM.There is a series of N-type pairs that distances are varied from Ohm to 20μm between every two junctions,which obtained by high resolution lithography.Current-voltage and Laser Beam Induced Current(LBIC)measurements are applied to determine the HgCdTe junction edge.The LBIC signal and current-voltage orrectification characteristic indicates the existence of a pn junction.The width of junctions that induced by IBM in intrinsic doped HgCdTe are measured.A significant horizontal expansion N-type region was observed.Moreover,the thickness of n-type that conversed by IBM was measured through differential hall measurement.