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Barrier structures of InAs/GaSb type-Ⅱ superlattices LWIR photodetectors
【机 构】
：
Shanghai Institute of Technical Physics,Chinese Academy of Sciences,500 Yutian Road,Shanghai,200083,
【出 处】
：
The 13th International Conference on Mid-Infrared Optoelectr
【发表日期】
：
2016年10期
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会议
Electroluminescence and photovoltaic effect in n-GaSb/InAs/p-GaSb heterostructure grown by MOVPE wit
InAs/GaSb quantum well(QW)structures attract a great attention due to their unique type Ⅱ broken-gap alignment [1].Such heterojunctions are important for design of QC lasers and MIR-superlattice photo