The investigation of cobalt film prepared by a plasma enhance atomic layer deposition with a Co(MeCp

来源 :等离子体催化与能源材料应用研讨会(ISPCEM2012) | 被引量 : 0次 | 上传用户：loopdd

【摘要】

：

Co thermal or plasma enhanced atomic layer deposition (ALD) using a metal organic precursor,Co(MeCp)2 were investigated from metal organic precursor,Co(MeCp)2,a

【作者】

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Jusang Park Han-Bo-Ram Lee Doyoung Kim Jaehong Yoon Clement Lansalot Julien Gatineau

【机构】

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SchoolofElectricalandElectronicEngineering,YonseiUniversity,Seoul,120-749,KoreaDepartmentofChemicalE

【出处】

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等离子体催化与能源材料应用研讨会(ISPCEM2012)

【发表日期】

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2012年9期

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Co thermal or plasma enhanced atomic layer deposition (ALD) using a metal organic precursor,Co(MeCp)2 were investigated from metal organic precursor,Co(MeCp)2,and NH3 or H2 reactant.The deposition characteristics,electrical and microstructural properties were investigated.Especially,we observed Co columnar structure formation at low substrate temperature when plasma enhanced ALD is applied with NH3 reactant.However,film growth of Co has a normal performance at the high substrate temperature.

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