Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户:coolboywcp
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  In nanoscale electronics,low-frequency noise is ubiquitous and dominates the signal-to-noise performance.Here,we monitored the low-frequency current fluctuations and investigated the mechanism of electric noise in layered MoTe2 transistors.The 1/f dependence of the noise was observed in the conducting channels in vacuum and followed the carrier number fluctuation model.More interesting,in ambient conditions,the noise spectrum changed to a Lorentzian,possibly because of a large number of gas molecules absorbed at the chalcogen vacancies,enhancing the trapping and emission of carriers between two discrete energy states.Our study attempts to give a basic understanding of the charge transport mechanism of electric noise in atomically thin transition metal dichalcogenides under different environments and may stimulate the development of a new sensing functionality.
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