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室温下,用94MeV的Xe离子辐照纳米晶和非晶硅薄膜以及单晶硅样品,辐照量分别为1.0×1011,1.0×1012和1.0×1013ions/cm2。所有样品均在室温下用UV/VIS/NIR光谱仪进行检测分析。通过对比研究了纳米晶、非晶、单晶硅样品的光学带隙随Xe离子辐照量的变化。结果表明,不同结构的硅材料中Xe离子辐照引起的光学带隙变化规律差异显著:随着Xe离子辐照量的增加,单晶硅的光学带隙基本不变,非晶硅薄膜的光学带隙由初始的约1.78eV逐渐减小到约1.54eV,而纳米晶硅薄膜的光学带隙则由初始的约1.50eV快速增大至约1.81eV,然后再减小至约1.67eV。对硅材料结构影响辐照效应的机理进行了初步探讨。
At room temperature, nanocrystalline and amorphous silicon thin films as well as single crystal silicon samples were irradiated with 94 MeV Xe ions at 1.0 × 10 11, 1.0 × 10 12 and 1.0 × 10 13 ions / cm 2, respectively. All samples were analyzed by UV / VIS / NIR spectrometer at room temperature. By comparing the optical bandgap of nanocrystalline, amorphous and monocrystalline silicon samples with Xe ion irradiation. The results show that there are significant differences in the optical band gap variation caused by Xe ion irradiation in different structures of silicon materials: the optical band gap of single crystal silicon is basically unchanged with the increase of Xe ion irradiation, the optical The bandgap decreases from about 1.78 eV initially to about 1.54 eV, whereas the optical bandgap of the nanocrystalline silicon film rapidly increases from about 1.50 eV initially to about 1.81 eV and then decreases to about 1.67 eV. The mechanism of the influence of the silicon material structure on the radiation effect was discussed.