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提出了用一种无机半导体的模型来计算有机电致发光器件(OELD s)的J-V特性。通过在金属/有机物界面插入薄L iF层,由此引入的偶极子能极大地降低了电子的注入势垒和OELD s的开启电压。从而,载流子的注入得到了平衡,OELDs的性能得到了较大提高。经过数值计算,发现LiF插入层有一个约为1.5~5.0nm的最优厚度。LiF层太厚或太薄都会提高器件的开启电压、降低器件的性能。结果表明:这一模型可以用来解释OELD通过LiF修饰阴极后性能的提高。
An inorganic semiconductor model has been proposed to calculate the J-V characteristics of an organic electroluminescent device (OELD s). By inserting a thin LiF layer at the metal / organic interface, the dipoles introduced thereby greatly reduce the electron injection barrier and the turn-on voltage of OELDs. As a result, carrier injection is balanced and the performance of OELDs is greatly enhanced. After numerical calculation, it is found that the LiF insertion layer has an optimum thickness of about 1.5 to 5.0 nm. LiF layer is too thick or too thin will increase the device’s turn-on voltage, reducing the performance of the device. The results show that this model can be used to explain the improved performance of OELD cathode modified by LiF.