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The establishment of an approach to design tunable yellow emission through singly doped single-phased phosphors to obtain white LED-based InGaN chip was reported. BaY2-xS4:xHo3+ phosphors were prepared by the high temperature solid state reaction and characterized by X-ray diffraction and photoluminescence spectra. Under the excitation of 465 nm,the emission spectra of these phosphors exhibited three sharp emission lines peaked at about 492,543 and 661 nm of Ho3+ corresponding to 5F3,5F4 (5S2) and 5F5→5I8 transitions,respectively,with comparable intensities,resulting in a yellow light emission. The luminescence mechanism for Ho3+ in BaY2S4 was explained.
The establishment of an approach to design tunable yellow emission through singly doped single-phased phosphors to obtain white LED-based InGaN chip was reported. BaY2-xS4: xHo3 + phosphors were prepared by the high temperature solid state reaction and characterized by X-ray diffraction Under the excitation of 465 nm, the emission spectra of these phosphors exhibited three sharp emission lines peaked at about 492,543 and 661 nm of Ho3 + corresponding to 5F3, 5F4 (5S2) and 5F5 → 5I8 transitions, respectively, with more intensities , resulting in a yellow light emission. The luminescence mechanism for Ho3 + in BaY2S4 was explained.