MOS—双极单片集成电路工艺

• 作 者: 陈桂英
• 出 处: 微电子学与计算机
• 发表日期: 1976年05期
• 关键词: 双极晶体管 单片集成电路 MOS 线性电路 数字电路 基区 界面态 水汽氧化 金属化 高温退火

MOS和双极做在同一芯片上,对数字和线性电路设计者提供很多优点。但是,实现相容的MOS-双极工艺有几个困难。最主要的一个困难是MOS管栅氧化时引起双极晶体管特性退化。在许多应用中,特别是在数字电路方面,对双极晶体管这些影响关系不大。但是,对要求很严的大多数线性电路,已发展了一种既不影响双极晶体管性能,同时又能保持MOS器件高性能的工艺。

MOS and bipolar on the same chip, digital and linear circuit designers to provide many advantages. However, there are several difficulties in achieving a compatible MOS-bipolar process. One of the most important difficulties is the degradation of the bipolar transistor characteristics caused by the MOS gate oxide. In many applications, especially in the digital circuits, these effects have little to do with bipolar transistors. However, for most of the most demanding linear circuits, a process has been developed that does not affect the performance of the bipolar transistor while maintaining the high performance of the MOS device.