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一、前言电真空器件是利用和控制自由电子在真空中(或在气体中)运动的规律来完成各种功能(如振荡,放大等)的。半导体器件是利用和控制半导体中载流子(空穴电子对)运动的规律来完成各种功能的。但是,这两种器件都受到一定的物理限制。Nergaard曾根据发射面积、最大场强、负载电阻、渡越时间、载流子速度等从理论上推导出不论是电真空器件或是半导体器件,它们的输出功率P_0和频率f都满足下列关系:
I. INTRODUCTION Electro-vacuum devices utilize various functions (eg, oscillation, amplification, etc.) by utilizing and controlling the movement of free electrons in a vacuum (or in a gas). Semiconductor devices utilize and control the law of carrier (hole electron pair) movement in semiconductors to accomplish various functions. However, both devices are subject to certain physical limitations. Nergaard has theoretically derived from the launch area, the maximum field strength, load resistance, transit time, carrier velocity, etc. Both the output power P_0 and the frequency f satisfy the following relationship whether it is an electric vacuum device or a semiconductor device: