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在室温下用直流磁控反应溅射的方法制备了ＡｌＮ薄膜．用ＡＥＳ方法和ＸＰＳ方法分析了ＡｌＮ膜和ＡｌＮ／ＧａＡｓ界面．在ＡｌＮ／ＧａＡｓ界面发现了Ｏ—Ａｌ键，没有发现Ｏ—Ｇａ键或Ｏ—Ａｓ键．本文通过实验证明，ＡｌＮ／ＧａＡｓ界面的Ｏ元素在ＡｌＮ淀积过程中从ＧａＡｓ表面转移到ＡｌＮ膜中．这与通过ＰＥＣＶＤ方法淀积ＡｌＮ薄膜形成的ＡｌＮ／ＧａＡｓ界面完全不同．由于ＡｌＮ／ＧａＡｓ界面的Ｏ元素是与Ａｌ结合的，因此有较好的界面特性．这是直流磁控反应溅射方法制备的ＡｌＮ薄膜适用于ＧａＡｓ器件钝化的主要原因
AlN thin films were prepared by direct current magnetron reactive sputtering at room temperature. The AlN film and AlN / GaAs interface were analyzed by AES and XPS methods. O-Al bonds were found at the AlN / GaAs interface and no O-Ga bonds or O-As bonds were found. In this paper, experiments show that the O element in the AlN / GaAs interface is transferred from the GaAs surface to the AlN film during AlN deposition. This is completely different from the AlN / GaAs interface formed by the AlN film deposition by the PECVD method. Since the O element of the AlN / GaAs interface is bonded with Al, it has better interface characteristics. This is the main reason for the passivation of GaAs devices by AlN film prepared by DC magnetron reactive sputtering