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由于AlGaN/GaN异质结界面极化效应产生的高浓度和高迁移率的二维电子气(2DEG),使AlGaN/GaN器件在电子器件领域具有显著的应用优势。AlGaN/GaN器件存在的电流崩塌现象限制了器件的实际应用。缓冲层陷阱是导致电流崩塌现象的重要原因之一。概述了AlGaN/GaN器件缓冲层陷阱的研究方法,分析了各种方法的优缺点。重点介绍了基于电容、电流瞬态测试的方法。介绍了基于电容瞬态测试方法中的热激发的电容式深能级瞬态谱(DLTS)、光激发的开启电容恢复和光激发的深能级光谱(DLOS)方法;直接通过电流瞬态测试难以区分陷阱的位置,总结了基于此方法的不同偏压条件下的电流瞬态测试、背栅电流瞬态谱、无栅极的源-漏测试结构分析方法。电容和电流瞬态测试方法具有灵敏度高的优点,适用于缓冲层陷阱的分析,为抑制电流崩塌提供了理论指导。
Due to the high concentration and high mobility of two-dimensional electron gas (2DEG) produced by the AlGaN / GaN heterojunction interface polarization effect, AlGaN / GaN devices have significant application advantages in the field of electronic devices. Current collapse in AlGaN / GaN devices limits the practical application of the device. Buffer trap is one of the important causes of current collapse. The research methods of buffer layer traps in AlGaN / GaN devices are summarized, and the advantages and disadvantages of various methods are analyzed. The method based on capacitance and current transient test is mainly introduced. A capacitive deep-level transient spectroscopy (DLTS) based on thermal excitation in a capacitive transient test method, a light-induced turn-on capacitance recovery and a light-induced deep level spectroscopy (DLOS) method are introduced; difficult to pass directly through the current transient test The position of the trap is distinguished, and the current transient test under different bias conditions, the back-gate current transient spectrum and the grid-free source-drain test structure analysis method are summarized. Capacitive and current transient test method has the advantages of high sensitivity, suitable for buffer layer trap analysis, in order to inhibit the current collapse provides a theoretical guide.