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结合机械合金化(MA)与放电等离子烧结(SPS)工艺制备了NiSe_2块体热电材料。研究了MA球磨时间和SPS烧结温度对NiSe_2热电材料的物相、显微组织以及电热传输性能的影响。结果表明:当转速为425 r/min,球磨40 h后合成了约45 nm的NiSe_2纳米粉体。NiSe_2粉体是一种直接禁带半导体,禁带宽度为2.653 eV,其块体呈n型导电特征。烧结温度为773 K时,NiSe_2块体材料在323 K获得最大功率因子101μW·m~(-1)·K~(-2),热导率为7.5 W·m~(-1)·K~(-1),最大ZT值为0.0045。
NiSe 2 bulk thermoelectric materials were prepared by mechanical alloying (MA) and spark plasma sintering (SPS). The effect of MA milling time and SPS sintering temperature on the phase, microstructure and electric heat transfer performance of NiSe_2 thermoelectric materials was investigated. The results show that when the rotating speed is 425 r / min, the NiSe 2 nanopowder about 45 nm is synthesized after milling for 40 h. NiSe 2 powder is a kind of direct band gap semiconductor with a forbidden band width of 2.653 eV and its bulk is n-type conductive. When the sintering temperature is 773 K, NiSe 2 bulk material obtains the maximum power factor of 101 μW · m -1 K -2 at 323 K and the thermal conductivity of 7.5 W · m -1 K ~ (-1), the maximum ZT value is 0.0045.