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为了获得高性能的量子点外腔激光器(ECL),利用InAs/GaAs量子点Fabry-Perot(FP)腔激光器研制了光栅外腔可调谐ECL。对InAs/GaAs量子点ECL进行了一系列的性能测试,主要包括单模稳定性测试、单模调谐范围测试、阈值电流密度测试、无跳模连续调谐测试和输出功率测试。在室温条件下获得了24.6nm的连续调谐范围,覆盖波长从999.2nm到1 023.8nm,并且实现了波长无跳模连续调谐。在调谐范围内最低阈值电流密度为1 525A/cm2,而且在中心波长处获得的单模输出功率为15mW,单模边模抑制比(SMSR)高达35dB。研究结果表明,通过构建光栅外腔可以实现高性能的InAs/GaAs量子点ECL。
In order to obtain a high performance quantum dot external cavity laser (ECL), grating external cavity tunable ECL was fabricated by using InAs / GaAs quantum dot Fabry-Perot (FP) cavity laser. A series of performance tests on InAs / GaAs QDs ECLs are carried out, including single-mode stability test, single-mode tuning range test, threshold current density test, skip mode continuous tuning test and output power test. The continuous tuning range of 24.6nm was obtained at room temperature, covering the wavelength from 999.2nm to 10223.8nm, and the wavelength hopping mode was continuously tuned. The lowest threshold current density in the tuning range is 1 525 A / cm2 and the single-mode output power at the center wavelength is 15 mW and the single-mode side mode suppression ratio (SMSR) is up to 35 dB. The results show that high performance InAs / GaAs quantum dots ECL can be achieved by constructing grating external cavity.