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GaAs pin光电二极管在数据通信领域发挥着重要的作用,在综合考虑了高速光电探测器的频率特性和响应度的基础上,给出了AlGaAs/GaAs pin光电二极管结构参数的最优化设计,使其在频率响应特性上满足10 Gbit/s的要求。着重研究了在半导体制作工艺中所涉及的光刻、腐蚀、表面钝化以及欧姆接触等问题,研制出暗电流小、响应速率高、响应度高而且可靠性良好的短波长高速pin光电二极管。在产品应用之前的可靠性测试中,老化时间大于2 000 h的情况下仍能保持良好的暗电流特性,满足工业化生产的条件。
GaAs pin photodiode plays an important role in the field of data communication. Based on the consideration of the frequency characteristics and responsivity of high-speed photodetector, the optimal design of structure parameters of AlGaAs / GaAs pin photodiode is given. Meet the 10 Gbit / s requirement in frequency response. Focusing on the problems of lithography, etching, surface passivation and ohmic contact involved in the fabrication of semiconductors, short wavelength high speed pin photodiodes with low dark current, high response rate, high responsivity and good reliability are developed. In the reliability test prior to the application of the product, good dark current characteristics can still be maintained under the aging time of more than 2000 h to meet the requirements of industrialized production.