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Al impurities modulated hexagonal wurtzite MgZnO nanocrystalline(AlMgZnO) film with a band gap of 4.3 e V was deposited on the c-plane sapphire substrate via radio frequency sputtering. The high quality deep UV AlMgZnO without phase segregation is an ideal material for the fabrication of UV-C devices due to its wide band gap and easy preparation. As a complicated quaternary system, AlMgZnO is found to have better crystal quality than the MgZnO film with high Mg content. Therefore, Al impurities must play important roles in the structural, morphological and optical characteristics of MgZnO films, such as realizing the suppression of phase separation, the promotion of crystalline quality as well as the facilitation of oriented growth and nanocrystalline transformation of MgZnO film.
Al Incorporation hexagonal wurtzite MgZnO nanocrystalline (AlMgZnO) film with a band gap of 4.3 e V was deposited on the c-plane sapphire substrate via radio frequency sputtering. The high quality deep UV AlMgZnO without phase segregation is an ideal material for the fabrication of As a complicated quaternary system, AlMgZnO is found to have better crystal quality than the MgZnO film with high Mg content. Therefore, Al impurities must play important roles in the structural, morphological and optical characteristics of MgZnO films, such as realizing the suppression of phase separation, the promotion of crystalline quality as well as facilitation of oriented growth and nanocrystalline transformation of MgZnO film.