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集成电路工艺的迅速发展在一个芯片上已可以制作10~5以上的元件,即LSI和VLSI大规模和超大规模。集成度的提高使元件的最小尺度降到一微米以下,而栅氧化层仅数十个nm。对这种电路的分析,常用的SEM就无能为力,必须求助于TEM的更高的分辨率。而XTEM技术是研究这种具有多层复杂结构的强有力的工具。本文作
The rapid development of integrated circuit technology in a chip has been able to make more than 10 to 5 components, namely LSI and VLSI large-scale and ultra-large-scale. The increase in integration reduces the minimum dimensions of the device below a micron, while the gate oxide is only a few tens of nm. Analysis of this circuit, the commonly used SEM on the powerless, you must resort to the TEM higher resolution. XTEM technology is a powerful tool to study this multi-layer, complex structure. This article as