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分析了HgCdTe材料中杂质浓度与费密能级的关系。根据Kane三能带模型和费密-狄拉克统计,直接利用电中性条件n-P_1-P_-P_3=N计算了在不同杂质浓度下包括高浓度简并状态下的费密能级位置,式中n、P_1、P_2、P_3分别为电子、重空穴、轻空穴、自旋分裂价带空穴的浓度,N为电离的杂质浓度,在具体计算中假设杂质全部电离。最后讨论了Burstein-Moss效应及其在应用中的影响,由直接跃迁准动量守恒及Kane的非抛物性能带,计算了光电导响应截止波长对杂质浓度的依赖关系。
The relationship between impurity concentration and Fermi level in HgCdTe material was analyzed. According to the Kane three-band model and the Fermi-Dirac statistics, the Fermi levels at different concentrations of impurities, including the densified states at high concentrations, were directly calculated using the neutral condition n-P 1 -P_-P 3 = N. In the formula, n, P_1, P_2, P_3 are electron, heavy hole, light hole, spin split valence band hole concentration, N is the ionization impurity concentration, in the specific calculations assume that all the impurities ionization. Finally, the Burstein-Moss effect and its application in the application are discussed. The dependence of the photoconductive response cutoff wavelength on the impurity concentration is calculated from the direct transition quasi-momentum conservation and Kane’s non-parabolic performance band.