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随着器件的升级换代和集成度的提高、功耗降低、输入阻抗增大等特点,以致有的器件对静电较敏感。为提高整机可靠性,把静电敏器件的损坏数尽量降低,我们在生产中采取了一些措施收到了一定的效果。静电敏感器件防护的必要性: 以MOS器件为例,它的铝栅极为SiO_~2薄层所绝缘(见图1)由于SiO_2的绝缘性能特别好,使得器件的输入电阻可达10~(12)Ω以上,这样栅极上的静电荷不能通过泄漏电流释放掉,而在栅极上聚积起来,所以栅极和沟道实际上构成了平行板电容器。随着静电荷聚积电压不断上升,再由于绝缘栅场效应管的输入电容只有3PF,即使是微量的电荷也会使电压升的很高,SiO_2薄层的厚度为0.15～0.17um其耐压为100V左右,超过了就要
With the upgrading of devices and the improvement of integration, the power consumption is reduced, the input impedance is increased and other characteristics, so that some devices are more sensitive to static electricity. In order to improve the reliability of the whole machine, minimize the damage of the static electricity sensitive device, we have taken some measures in the production and received the certain effect. Necessity of Electrostatic Sensitive Device Protection: Taking MOS device as an example, its aluminum gate is insulated by a thin layer of SiO 2 (see FIG. 1). Since the insulating property of SiO 2 is particularly good, the input resistance of the device can reach 10-12 ) Ω, so that the electrostatic charge on the gate can not be released by the leakage current and accumulates on the gate, so the gate and the channel actually form a parallel plate capacitor. With the electrostatic charge accumulation voltage rising, and then because of the insulated gate FET input capacitance of only 3PF, even a small amount of charge will make the voltage rise high, the thickness of the thin layer of SiO2 0.15 ~ 0.17um its pressure is 100V or so, more than necessary