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应用转移矩阵方法求解三种不同量子阱体系中基于单带有效质量模型和包络函数近似下的一维定态薛定谔方程.首先,通过比较Ⅰ型单量子阱GaAlAs/GaAs/GaAlAs体系的解析解和数值解,该方法的精确性得到了验证.其次,与Ⅱ型断代量子阱AlSb/InAs/GaSb/AlSb系统的光致发光谱实验结果比较证实了该方法的适用性.最后,利用该方法推广计算了基于GaAs/GaAlAs材料的Ⅰ型耦合多量子阱体系的子带能级和波函数,说明了方法的通用性和实用性.
One-dimensional stationary Schrödinger equation based on the single-band effective mass model and the envelope function approximation was solved by the transfer matrix method. First, by comparing the analytical solutions of the GaAlAs / GaAs / GaAlAs system of type I single quantum well And the numerical solution, the accuracy of this method has been verified.Secondly, compared with the experimental results of the photoluminescence spectra of typeⅡdisrupted quantum wells AlSb / InAs / GaSb / AlSb system, the applicability of this method is confirmed.Finally, The subband levels and wave functions of the type Ⅰ coupled multiple quantum well system based on GaAs / GaAlAs materials are generalized and calculated, which shows the versatility and practicability of the method.