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众所周知,GaAs汽相外延中,衬底中的补偿杂质以自掺杂和外扩散的形式进入外延层,引起外延材料的补偿.近年来,从补偿比来研究掺杂GaAs的行为渐渐地受到了重视.我们采用一种新技术生长了具有低补偿比的GaAs外延材料.实验是在AsCl_3/H_2/Ga体系和立式炉中进行.衬底是<100>取向的掺Cr半绝缘GaAs单晶,在同样条件下,采用新技术和普通工艺两种方法生长的外延材料,其结果是,新技术的室温μ_H略高于普通法,而77°K的μ_H却有明显的提高.根据迁移率的结果分析来确定外延层中杂质的补偿比N_A/N_D,结果表明,新技术生长的外延材料,其杂质补偿比,比通常方法生长的要低,较好的结果是<0.2.
As we all know, GaAs vapor phase epitaxy, the substrate of the compensation impurities in the form of self-doping and diffusion into the epitaxial layer, causing the epitaxial material compensation.In recent years, from the compensation ratio to study the behavior of doped GaAs gradually by We take a new technique to grow a GaAs epitaxial material with a low compensation ratio.The experiment was performed in a AsCl 3 / H 2 / Ga system and a vertical furnace.The substrate was a <100> -oriented Cr-doped semi-insulating GaAs single crystal Under the same conditions, the epitaxial materials grown by both new and common techniques show that μ_H at room temperature of the new technology is slightly higher than that of the common method, while the μ_H at 77 ° K increases obviously.According to the mobility The result shows that the compensation ratio of impurities in the epitaxial layer is N_A / N_D. The results show that the epitaxial material grown by the new technology has a lower impurity compensation ratio than that of the conventional method. The good result is <0.2.