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结合栅是由金属-绝缘-金属的夹层构成,并直接与浸渍钨阴极相接触。栅级组件的金属端面构成控制栅,而其底部的金属层则构成了阴极与绝缘层之间的钡扩散的壁障。一种应用于微波三极管的结合栅结构,已于1976年研制出来并在国际电子器件会议上作了介绍。本文将进一步介绍,如何把这种结构应用到线性注微波管的收敛电子枪中去。线性注管所严格要求的低的栅发射,已在对多种控制栅材料进行实验研究后得以实现。业已制造了一种电子枪,即在热介石墨上,涂一薄层氮化硼作为控制栅。并在电子注分析器中,对其电气和电子光学性能作了评价。从控制栅上产生的发射降低了三个数量级。描述了结合栅组件与阴极表面的永久性接触的方法。详细叙述了枪的制造技术和试验结果。
The bonding gate is composed of a metal-insulator-metal interlayer and is in direct contact with the impregnated tungsten cathode. The metal end face of the gate-level module forms the control gate, and the metal layer on the bottom forms the barrier for barium diffusion between the cathode and the insulating layer. A combined gate structure used in microwave triodes was developed in 1976 and introduced at the International Electronic Devices Conference. This article will be further described, how to apply this structure to the linear microwave tube convergence electron gun to go. Low gate emission, which is strictly required for linear injection, has been achieved experimentally with a variety of control gate materials. An electron gun has been made, that is, a thin layer of boron nitride is applied as a control gate on the pyrogenic graphite. And in the electronic injection analyzer, its electrical and electronic optical properties were evaluated. The emission from the control gate is reduced by three orders of magnitude. A method of combining permanent contact with the cathode surface with the grid assembly is described. Described in detail the gun manufacturing technology and test results.