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本文报导关于TGS单晶热释电电压U_p(T)与温度的关系的研究结果。发现在低于相变点几度的温度下,U_p(T)曲线上有一突变点。此突变点的位置与样品极化的方式及电极的种类有关。并用电畴结构的“破坏”来解释突变点的存在。
This paper reports the results of studies on the relationship between temperature and U_p (T) of TGS single crystal pyroelectric voltage. It is found that there is a mutation point on the U_p (T) curve at a temperature several degrees below the phase transition point. The location of this mutation point is related to the way the sample is polarized and the type of electrode. The “damage” of the domain structure is used to explain the existence of the mutation point.